Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)

US8673074B2 · kind B2 · utility

Assignee

• Ostendo Technologies, Inc. · US

Inventors

• Alexander Usikov · Rockville, US
• Alexander Syrkin · Montgomery Village, US
• Robert G. W. Brown · Tustin, US
• Hussein S. El-Ghoroury · Carlsbad, US
• Philippe Spiberg · Laguna Beach, US
• Vladimir Ivantsov · Gaithersburg, US
• Oleg Kovalenkov · Montgomery Village, US
• Lisa Shapovalova · Gaithersburg, US

Key dates

• Filing date: Jul 15, 2009
• Grant date: Mar 18, 2014
• Expiry date: Aug 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.