Patent · US Active

Plasma processing apparatus and plasma processing method

US8673166B2 · kind B2 · utility

13Cited by
11References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 28, 2009
Grant dateMar 18, 2014
Priority date
Expiry dateSep 17, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T279/23
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.