Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
US8673248B2 · kind B2 · utility
8Cited by
47References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 18, 2007 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Aug 8, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.