FinFET and method for manufacturing the same

US8673704B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Wei He · Tappan, US
• Qingqing Liang · Fishkill, US
• Haizhou Yin · Poughkeepsie, US
• Zhijiong Luo · Poughkeepsie, US

Key dates

• Filing date: May 14, 2012
• Grant date: Mar 18, 2014
• Expiry date: May 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A FinFET and a method for manufacturing the same are disclosed. The FinFET comprises an etching stop layer on a semiconductor substrate; a semiconductor fin on the etching stop layer; a gate conductor extending in a direction perpendicular to a length direction of the semiconductor fin and covering at least two side surfaces of the semiconductor fin; a gate dielectric layer between the gate conductor and the semiconductor fin; a source region and a drain region which are provided at two ends of the semiconductor fin respectively; and an interlayer insulating layer adjoining the etching stop layer below the gate dielectric layer, and separating the gate conductor from the etching stop layer and the semiconductor fin. A height of the fin of the FinFET is approximately equal to a thickness of a semiconductor layer for forming the semiconductor fin.