Patent · US Active

Memory device and method of fabricating thereof

US8673715B2 · kind B2 · utility

0Cited by
0References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 2008
Grant dateMar 18, 2014
Priority date—
Expiry dateApr 24, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/664
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.