Ammonium sulfide passivation of semiconductors
US8673746B2 · kind B2 · utility
0Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Dec 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes methods directed to improved processes for producing a monolayer of sulfur on the surface of a semiconductor. As a surface layer, it functions to passivate the surface; if annealed, it provides a doping element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.