Tungsten film forming method
US8673778B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Nov 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber includes forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas and adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film. The film forming method further includes depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.