Thin absorber layer of a photovoltaic device

US8674214B2 · kind B2 · utility

Assignee

• ALTA DEVICES, INC. · US

Inventors

• Isik C. Kizilyalli · San Francisco, US
• Melissa Archer · Mountain View, US
• Harry A. Atwater · South Pasadena, US
• Thomas J. Gmitter · Lakewood, US
• Gang He · Magnolia Trace, CA
• Andreas Hegedus · Burlingame, US
• Gregg Higashi · San Jose, US

Key dates

• Filing date: Oct 23, 2009
• Grant date: Mar 18, 2014
• Expiry date: Apr 8, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.