Semiconductor structure having vias and high density capacitors
US8674423B2 · kind B2 · utility
25Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Nov 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.