Semiconductor device and method for manufacturing the same

US8674449B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Zhijiong Luo · Poughkeepsie, US
• Haizhou Yin · Poughkeepsie, US

Key dates

• Filing date: Nov 25, 2011
• Grant date: Mar 18, 2014
• Expiry date: Nov 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A semiconductor device and a method for manufacturing the same are disclosed. In one embodiment, the semiconductor device may comprise a semiconductor layer, a fin formed by patterning the semiconductor layer, and a gate stack crossing over the fin. The fin may comprise a doped block region at the bottom portion thereof. According to the embodiment, it is possible to effectively suppress current leakage at the bottom portion of the fin by the block region.