Semiconductor device
US8674455B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
A semiconductor device is provided, which includes an N well having a peak concentration of 2E+17 atom/cm3 or more in the range of 0.2 to 1 μm depth from the surface of a P-type semiconductor substrate, and a region provided below the N well, the region containing P-type impurities with higher concentration than concentration of electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.