Low harmonic RF switch in SOI
US8674472B2 · kind B2 · utility
25Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2010 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.