Semiconductor device
US8674491B2 · kind B2 · utility
5Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.