Method of forming a semiconductor device with a contact pad on a sloped silicon dioxide surface
US8674511B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 5, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Oct 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for expanding an effective area in which a semiconductor structure required for a semiconductor device to function is desired. With the semiconductor device 2 of this invention, a pad 12 to be connected with a conductive wire 14 is sloping with respect to the surface of the semiconductor device 2 around the pad 12 and along a longitudinal direction of the conductive wire 14. Consequently, the length of the pad 12, when projecting the pad 12 onto the surface of the semiconductor device 2, can be shortened. As a result, the area of the pad region 10 can be reduced and the effective area for forming a semiconductor structure can be enlarged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.