Non-volatile memory devices
US8675409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | May 3, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a ground select line crossing the active region, and a string select line crossing the active region and spaced apart from the ground select line. A plurality of memory cell word lines may cross the active region between the ground select line and the string select line with about a same first spacing provided between adjacent ones of the plurality of word lines and between a last of the plurality of memory cell word lines and the string select line. A second spacing may be provided between the ground select line and a first of the plurality of memory cell word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.