Low temperature metal etching and patterning
US8679359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2011 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method and apparatus for etching various metals that may be used in semiconductor or integrated circuit processing through the use of non-halogen gases such as hydrogen, helium, or combinations of hydrogen and helium with other gases such as argon. In one exemplary embodiment of the present invention, in a reaction chamber, a substrate having a metal interconnect layer deposited thereon is exposed to a plasma formed of non-halogen gas. The plasma generated is maintained for a certain period of time to provide for a desired or expected etching of the metal. In some embodiments, the metal interconnect layer may be copper, gold or silver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.