Growth method for reducing defect density of gallium nitride
US8679881B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2013 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02554
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A growth method for reducing defect density of GaN includes steps of: sequentially forming a buffer growth layer, a stress release layer and a first nanometer cover layer on a substrate, wherein the first nanometer cover layer has multiple openings interconnected with the stress release layer; growing a first island in each of the openings; growing a first buffer layer and a second nanometer cover layer on the first island; and growing a second island to form a dislocated island structure. Thus, through the first nanometer cover layer and the second nanometer cover layer, multiple dislocated island structures can be directly formed to reduce manufacturing complexity as well as increase yield rate by decreasing manufacturing environment variation. Further, the epitaxial lateral over growth (ELOG) approach also effectively enhances characteristics of GaN optoelectronic semiconductor elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.