High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US8679959B2 · kind B2 · utility
7Cited by
54References
3Claims
0Family size
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Key dates
| Filing date | Sep 3, 2009 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Mar 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.