Integrated circuit metal gate structure and method of fabrication
US8679962B2 · kind B2 · utility
14Cited by
14References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2008 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | May 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.