Patent · US Active

Method for forming trenches in a semiconductor component

US8679975B2 · kind B2 · utility

1Cited by

0References

25Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Jochen Reinmuth · Reutlingen, DE
Barbara Will · Herrenberg, DE
Heribert Weber · Leverkusen, DE

Key dates

Filing date	Jan 11, 2011
Grant date	Mar 25, 2014
Priority date	—
Expiry date	Sep 11, 2031

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81B2203/033
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.