High electron mobility transistor structure with improved breakdown voltage performance

US8680535B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Fu-Wei Yao · Hsinchu, TW
• Chun-Wei Hsu · Taichung, TW
• Chen-Ju Yu · Jiaoxi Township, TW
• Jiun-Lei Jerry Yu · Dashulong, TW
• Fu-Chih Yang · Fengshang, TW
• Chih-Wen Hsiung · Hsinchu, TW
• King-Yuen Wong · Issaquah, US

Key dates

• Filing date: Jan 20, 2012
• Grant date: Mar 25, 2014
• Expiry date: Feb 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A HEMT includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate, a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer, and a passivation material layer having one or more buried portions contacting or almost contacting the UID GaN layer. A carrier channel layer at the interface of the donor-supply layer and the UID GaN layer has patches of non-conduction in a drift region between the gate and the drain. A method for making the HEMT is also provided.