High power ultraviolet light sources and method of fabricating the same
US8680551B1 · kind B1 · utility
2Cited by
3References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2011 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A vertically conducting LED comprising, in a layered arrangement: a highly thermally conductive submount wherein the highly conductive submount has a thermal conductivity of at least 100 W/m0K; a p-type layer comprising Al1-x-yInyGax N wherein 0≦x≦1 and 0≦y≦1; a quantum well layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; an n-type layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; and an n-type contact layer wherein the LED has a peak emission at 200-365 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.