CMOS device and method of forming the same

US8680576B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Kuo-Cheng Ching · Hsinchu, TW
• Shi Ning Ju · Hsinchu, TW
• Cary Chia-Chiung Lo · Taipei, TW
• Huicheng Chang · Tainan, TW
• Chun Chung Su · New Taipei, TW

Key dates

• Filing date: May 16, 2012
• Grant date: Mar 25, 2014
• Expiry date: May 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer.