Transistor comprising nanocrystals and related devices
US8680603B2 · kind B2 · utility
1Cited by
0References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for fabricating a transistor may include forming source and drain regions in a substrate, and forming a floating gate having electrically conductive nanoparticles able to accumulate electrical charge. The process may include deoxidizing part of the floating gate located on the source side, and oxidizing the space resulting from the prior deoxidation so as to form an insulating layer on the source side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.