Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
US8680618B2 · kind B2 · utility
9Cited by
0References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
An integrated circuit having a replacement HiK metal gate transistor and a front end SiCr resistor. The SiCr resistor replaces the conventional polysilicon resistor in front end processing and is integrated into the contact module. The first level of metal interconnect is located above the SiCr resistor. First contacts connect to source/drain regions. Second contacts electrically connect the first level of interconnect to either the SiCr resistor or the metal replacement gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.