Ebenezer E. Eshun
71Patents
11h-index
60Co-inventors
77Inventor score
Filing activity: Dec 13, 2002 → Oct 5, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7670921B2 | Structure and method for self aligned vertical plate capacitor | Electricity | 29 | Active |
| US7217981B2 | Tunable temperature coefficient of resistance resistors and method of fabricating same | Electricity | 24 | Expired |
| US7662722B2 | Air gap under on-chip passive device | Electricity | 22 | Active |
| US7768055B2 | Passive components in the back end of integrated circuits | Electricity | 21 | Expired |
| US6876028B1 | Metal-insulator-metal capacitor and method of fabrication | Electricity | 15 | Expired |
| US6992344B2 | Damascene integration scheme for developing metal-insulator-metal capacitors | Electricity | 13 | Expired |
| US7902629B2 | Integrated BEOL thin film resistor | Electricity | 13 | Active |
| US8159040B2 | Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor | Electricity | 13 | Active |
| US7949983B2 | High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature | Electricity | 12 | Active |
| US7361950B2 | Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric | Electricity | 12 | Expired |
| US7361993B2 | Terminal pad structures and methods of fabricating same | Electricity | 12 | Expired |
| US7282404B2 | Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme | Electricity | 11 | Expired |
| US7825441B2 | Junction field effect transistor with a hyperabrupt junction | Electricity | 11 | Active |
| US7485540B2 | Integrated BEOL thin film resistor | Electricity | 10 | Active |
| US7271700B2 | Thin film resistor with current density enhancing layer (CDEL) | Electricity | 9 | Expired |
| US7439151B2 | Method and structure for integrating MIM capacitors within dual damascene processing techniques | Electricity | 9 | Active |
| US8129234B2 | Method of forming bipolar transistor integrated with metal gate CMOS devices | Electricity | 9 | Active |
| US8680618B2 | Structure and method for integrating front end SiCr resistors in HiK metal gate technologies | Electricity | 9 | Active |
| US7528048B2 | Planar vertical resistor and bond pad resistor and related method | Electricity | 8 | Active |
| US7645675B2 | Integrated parallel plate capacitors | Electricity | 7 | Expired |
| US6940117B2 | Prevention of Ta2O5 mim cap shorting in the beol anneal cycles | Electricity | 7 | Expired |
| US8378450B2 | Interdigitated vertical parallel capacitor | Electricity | 7 | Active |
| US9093298B2 | Silicide formation due to improved SiGe faceting | Electricity | 7 | Active |
| US7585722B2 | Integrated circuit comb capacitor | Electricity | 6 | Active |
| US7394145B2 | Methods of fabricating passive element without planarizing and related semiconductor device | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.