Capacitor structures having improved area efficiency
US8680650B2 · kind B2 · utility
7Cited by
7References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 3, 2009 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures including a plurality of conductive structures having a dielectric material therebetween are disclosed. The thickness of the dielectric material spacing apart the conductive structures may be adjusted to provide optimization of capacitance and voltage threshold. The semiconductor structures may be used as capacitors, for example, in memory devices. Various methods may be used to form such semiconductor structures and capacitors including such semiconductor structures. Memory devices including such capacitors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.