Method and resulting capacitor structure for liquid crystal on silicon display devices
US8681283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2011 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A liquid crystal on silicon display device (LCOS) has a semiconductor substrate comprising a surface region and a gate dielectric layer overlying the surface region. The device also has a word line formed overlying the gate dielectric layer and a first source/drain region coupled to the word line. The device has a bottom electrode structure formed overlying an interlayer dielectric. A capacitor dielectric is formed overlying the bottom electrode. A top electrode structure is formed overlying the capacitor dielectric to form a capacitor structure including the bottom electrode structure, the capacitor dielectric, and the top electrode structure. The device has a mirror surface formed overlying the top electrode structure to form a pixel electrode structure and a liquid crystal material provided overlying the mirror surface. In an embodiment, the LCOS described above is in an integrated circuit chip that also includes a DRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.