Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
US8685272B2 · kind B2 · utility
4Cited by
6References
15Claims
0Family size
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Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Oct 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.