Variable resistance materials with superior data retention characteristics
US8685291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2010 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.