Method for manufacturing and magnetic devices having double tunnel barriers
US8685756B2 · kind B2 · utility
27Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.