Method for fabricating three-dimensional gallium nitride structures with planar surfaces

US8685774B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Mark Albert Crowder · Portland, US
• Changqing Zhan · Vancouver, US
• Paul J. Schuele · Washougal, US

Key dates

• Filing date: Dec 27, 2011
• Grant date: Apr 1, 2014
• Expiry date: Jan 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A method is provided for fabricating three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. After providing a substrate, the method grows a GaN film overlying a top surface of the substrate and forms cavities in a top surface of the GaN film. The cavities are formed using a laser ablation, ion implantation, sand blasting, or dry etching process. The cavities in the GaN film top surface are then wet etched, forming planar sidewalls extending into the GaN film. More explicitly, the cavities are formed into a c-plane GaN film top surface, and the planar sidewalls are formed perpendicular to a c-plane, in the m-plane or a-plane family.