Patent · US Active

Wafer level packaged MEMS device

US8685776B2 · kind B2 · utility

9Cited by
6References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 10, 2010
Grant dateApr 1, 2014
Priority date
Expiry dateJul 7, 2031

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/036
  • WIPO fieldOther special machines
  • WIPO sectorMechanical engineering

Abstract

An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.