Patent · US Active

Methods for forming through vias

US8685798B2 · kind B2 · utility

5Cited by
47References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 14, 2013
Grant dateApr 1, 2014
Priority date
Expiry dateJun 14, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for forming through vias in an integrated circuit package are disclosed. A substrate having a first surface is covered with an encapsulation layer of uncured material; the method includes inserting an upper mold tool having a first plurality of pillars into the encapsulation layer to imprint through vias extending to the first surface of the substrate; curing the encapsulation layer and the through vias; removing the upper mold tool from the encapsulation layer; and disposing conductor material within the through vias to make electrical connectors within the through vias. In additional methods, a method for forming an encapsulation layer using an upper and lower mold tool to form through vias and a mold cavity is disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.