Direct growth of graphene on substrates
US8685843B2 · kind B2 · utility
9Cited by
0References
36Claims
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Key dates
| Filing date | Jan 9, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jan 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02422
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.