Semiconductor device with buffer layer
US8685849B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Sep 25, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/10
Abstract
A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.