Method of forming a via in a semiconductor device
US8685854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for burying a tungsten member into a blind hole formed in a wafer, in which blind hole a through via is to be made. Film-formation (for forming the tungsten member) is carried out to position, at the periphery of the wafer, the outer circumference of the tungsten member inside the outer circumference of a barrier metal beneath the tungsten film. This process makes it possible to bury the tungsten member, which may be relatively thin, into the blind hole, which may be relatively large, so as to decrease a warp of the wafer and further prevent an underlying layer beneath the tungsten member from being peeled at the periphery of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.