Phase-change random access memory device and method of manufacturing the same
US8686385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
The PCRAM device includes a semiconductor substrate including a switching device; an interlayer insulating layer having a heating electrode contact hole exposing the switching device, a heating electrode formed to be extended along a side of the interlayer insulating layer in the heating electrode contact hole, wherein the heating electrode has a width gradually increased toward a bottom of the heating electrode and is in contact with the switching device, first and second phase-change layers formed within the heating electrode contact hole that includes the heating electrode, and a phase-change separation layer formed in the heating electrode contact hole between the first and second phase-change layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.