Semiconductor device and structure
US8686428B1 · kind B1 · utility
32Cited by
329References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device with an external surface, the device including: a substrate including first mono-crystal transistors; a second layer including second mono-crystal transistors, the second mono-crystal transistors overlaying the first mono-crystal transistors; and a plurality of thermal conduction paths from a plurality of the second layer locations to the external surface, wherein at least one of the thermal conduction paths includes an electrically nonconductive contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.