Buffer layer for GaN-on-Si LED
US8686430B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.