Semiconductor device comprising semiconductor substrate and having diode region and IGBT region
US8686467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Sep 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.