High density FET with integrated Schottky
US8686493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A semiconductor structure includes a monolithically integrated trench FET and Schottky diode. The semiconductor structure further includes a plurality of trenches extending into a semiconductor region. A stack of gate and shield electrodes are disposed in each trench. Body regions extend over the semiconductor region between adjacent trenches, with a source region extending over each body region. A recess having tapered edges extends between every two adjacent trenches from upper corners of the two adjacent trenches through the body region and terminating in the semiconductor region below the body region. An interconnect layer extends into each recess to electrically contact tapered sidewalls of the source regions and the body regions, and to contact the semiconductor region along a bottom of each recess to form a Schottky contact therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.