Patent · US Active

Schottky diode integrated into LDMOS

US8686502B2 · kind B2 · utility

5Cited by
0References
8Claims
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Key dates

Filing dateAug 30, 2013
Grant dateApr 1, 2014
Priority date—
Expiry dateAug 30, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/64

Abstract

In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.