Silicide formation and associated devices
US8686516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2013 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jun 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
Abstract
Improved silicide formation and associated devices are disclosed. An exemplary semiconductor device includes a semiconductor substrate, a fin structure disposed over the semiconductor substrate and having spaced source and drain regions extending outwardly from a channel region, and a gate structure disposed on a portion of the fin structure, the gate structure engaging the fin structure adjacent to the channel region. The device also includes a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region and a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region. Further, the device includes a source contact conductively coupled to the first silicide layer and a drain contact conductively coupled to the second silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.