Spin-torque magnetoresistive structures
US8686520B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2009 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a first ferromagnetic layer, a first nonmagnetic spacer layer proximate to the first ferromagnetic layer, a second ferromagnetic layer proximate to the first nonmagnetic spacer layer, and a first antiferromagnetic layer proximate to the second ferromagnetic layer. For example, the first ferromagnetic layer may comprise a first pinned ferromagnetic layer, the second ferromagnetic layer may comprise a free ferromagnetic layer, and the first antiferromagnetic layer may comprise a free antiferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.