Magnetic memory element and magnetic random access memory
US8687414B2 · kind B2 · utility
7Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2009 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | May 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.