Method of fabricating semiconductor device
US8689150B2 · kind B2 · utility
1Cited by
4References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor device includes preparing a layout of the semiconductor device, obtaining contrast of an exposure image of the layout through a simulation under a condition of using a crosspole illumination system, separating the layout into a plurality of sub-layouts based on the contrast of the exposure image, forming a photomask having a mask pattern corresponding to the plurality of sub-layouts, and performing an exposure process using the photomask under an exposure condition of using a dipole illumination system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.