Compound semiconductor substrate production method
US8690636B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T83/283
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.