Patent · US Active

Method for metal-free synthesis of epitaxial semiconductor nanowires on si

US8691011B2 · kind B2 · utility

8Cited by

11References

6Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars Samuelson · Malmö, SE
Thomas Mårtensson · Malmö, SE
Werner Seifert · Bargteheide, DE
Anders Mikkelsen · Älvsbyn, SE
Bernhard Mandl · Fridau, AT

Key dates

Filing date	Mar 7, 2007
Grant date	Apr 8, 2014
Priority date	—
Expiry date	Oct 21, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/852
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.