Method of manufacturing plasmon generator
US8691102B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Dec 31, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a plasmon generator includes the steps of: forming an etching mask on a dielectric layer; forming an accommodation part by etching the dielectric layer using the etching mask; and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the etching mask includes the steps of: forming a patterned layer on an etching mask material layer, the patterned layer having a first opening that has a sidewall; forming a structure by forming an adhesion film on the sidewall, the structure having a second opening smaller than the first opening; and etching a portion of the etching mask material layer exposed from the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.